PART |
Description |
Maker |
TBB1002 TBB1002BMTL-E TBB100206 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1012 TBB1012MMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB305C BB305CEW-TL-E |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB502M BB502MBS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB503CCS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB504C |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB305M BB305MEW-TL-E |
Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
BB302M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|